JPH0131304B2 - - Google Patents

Info

Publication number
JPH0131304B2
JPH0131304B2 JP56018747A JP1874781A JPH0131304B2 JP H0131304 B2 JPH0131304 B2 JP H0131304B2 JP 56018747 A JP56018747 A JP 56018747A JP 1874781 A JP1874781 A JP 1874781A JP H0131304 B2 JPH0131304 B2 JP H0131304B2
Authority
JP
Japan
Prior art keywords
region
regions
transistor
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56018747A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57132353A (en
Inventor
Hideaki Sadamatsu
Akira Matsuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56018747A priority Critical patent/JPS57132353A/ja
Publication of JPS57132353A publication Critical patent/JPS57132353A/ja
Publication of JPH0131304B2 publication Critical patent/JPH0131304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56018747A 1981-02-09 1981-02-09 Semiconductor integrated circuit Granted JPS57132353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56018747A JPS57132353A (en) 1981-02-09 1981-02-09 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56018747A JPS57132353A (en) 1981-02-09 1981-02-09 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57132353A JPS57132353A (en) 1982-08-16
JPH0131304B2 true JPH0131304B2 (en]) 1989-06-26

Family

ID=11980239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56018747A Granted JPS57132353A (en) 1981-02-09 1981-02-09 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57132353A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3856150T2 (de) * 1987-10-08 1998-08-06 Matsushita Electric Ind Co Ltd Halbleiteranordnung und verfahren zur herstellung
US5292671A (en) * 1987-10-08 1994-03-08 Matsushita Electric Industrial, Co., Ltd. Method of manufacture for semiconductor device by forming deep and shallow regions
KR950005463B1 (ko) * 1992-06-29 1995-05-24 재단법인한국전자통신연구소 에미터 커플드 논리 반도체 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434785A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS57132353A (en) 1982-08-16

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